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[SMM] Scanning Microwave Microscopy Method

[SMM] Scanning Microwave Microscopy Method

Scanning Microwave Microscopy

SMM scans the measurement sample using a conductive probe to observe its surface topography. Simultaneously, microwaves are irradiated from the probe to the sample, and by measuring the reflected response, it is possible to obtain signals correlated with carrier concentration, particularly in the case of semiconductors. The intensity of the SMM signal is linearly correlated with carrier concentration, which is a characteristic feature that provides high quantitativeness. - For Si devices, sensitivity is present for carrier concentrations around 10^15 to 10^20 cm^-3. - Since signals correlated linearly with carrier concentration can be obtained, quantitative evaluation (semi-quantitative) is possible under certain assumptions. - AFM images can also be acquired. - Various semiconductors such as Si, SiC, GaN, InP, and GaAs can be measured. This document introduces application examples, principles, and data examples. For more details, please download the document or contact us.

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  • Microwave Microscope

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[Analysis Case] SiC by SMM and SNDM

[Analysis Case] SiC by SMM and SNDM

You can evaluate the p/n polarity and carrier concentration distribution of the diffusion layer in SiC devices.

In recent years, SiC has attracted attention as a material for high-voltage devices. The trench MOSFET structure allows for high integration of the elements, and applications for SiC devices are also being advanced. On the other hand, there are challenges regarding the dopant activation rate of SiC devices, making performance evaluation important. In this instance, we will introduce a case where carrier polarity determination was conducted using SNDM (Scanning Nonlinear Dielectric Microscopy) and carrier concentration distribution was evaluated using SMM (Scanning Microwave Microscopy) for SiC trench MOSFETs.

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  • Other electronic parts
  • Microwave Microscope

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[Analysis Case] Evaluation of DC Voltage Dependence of Carriers in Semiconductors

[Analysis Case] Evaluation of DC Voltage Dependence of Carriers in Semiconductors

We will introduce an analysis case using Si samples with known carrier concentration!

Our organization offers evaluation of the direct current voltage dependence of carriers in semiconductors. SMM measurement is a technique that can map the concentration of carriers in semiconductors. Additionally, it is possible to apply a direct current voltage to the sample during SMM measurement to induce carriers while measuring. Mapping measurements are conducted while acquiring SMM signals under different applied voltage conditions at each measurement point, constructing a data cube. After collecting all data, analyzing the SMM signals according to the applied voltage conditions allows us to visualize the behavior of carriers in response to the applied voltage. [Measurement Method / Processing Method] ■ [SMM] Scanning Microwave Microscope Method *For more details, please download the PDF or feel free to contact us.

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  • Microwave Microscope

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